SFA Link
 
 

HIGH VOLTAGE GATE DRIVERS

 

HV Gate Driver choice graphic

IX2113: 600V High and Low Side Gate Driver (top)
  • Floating Channel for Bootstrap Operation to +600V with Absolute Maximum Rating of +700V
  • Outputs Capable of Sourcing and Sinking 2A
  • Gate Drive Supply Range From 10V to 20V
  • Enhanced Robustness due to SOI Process
  • Tolerant to Negative Voltage Transients: dV/dt Immune
  • 3.3V Logic Compatible
  • Undervoltage Lockout for Both High-side and Low-Side Outputs
  • Matched Propagation Delays

IX2113 (Data Sheet - Rev 3) The IX2113 is a high voltage integrated circuit that can drive high speed MOSFETs and IGBTs that operate at up to +600V. The IX2113 is configured with independent high-side and low-side referenced output channels, both of which can source and sink 2A. The floating high-side channel can drive an N-channel power MOSFET or IGBT 600V from the common reference.

Manufactured on IXYS Integrated Circuits Division's proprietary high-voltage BCDMOS on SOI (silicon on insulator) process, the IX2113 is extremely robust, and is virtually immune to negative transients. The UVLO circuit prevents the turn-on of the MOSFET or IGBT until there is sufficient Vbs or Vcc supply voltage. Propagation delays are matched for use in high frequency applications.

The IX2113 is available in a 16-pin SOIC package.

IX2113 Application Diagram

IX2113-EVAL Evaluation Board: IXYS Integrated Circuits Division's IX2113 Evaluation Board contains all the necessary circuitry to demonstrate the features of a high voltage gate driver configured as a half-bridge driver.

IX2113 Evaluation Board User's Guide
Contact one of our Authorized Distributors

IX2120: 1200V High and Low Side Gate Driver (top)
  • Floating Channel for Bootstrap Operation to +600V with Absolute Maximum Rating of +700V
  • Outputs Capable of Sourcing and Sinking 2A
  • Gate Drive Supply Range From 15V to 20V
  • Enhanced Robustness due to SOI Process
  • Tolerant to Negative Voltage Transients: dV/dt Immune
  • 3.3V Logic Compatible
  • Undervoltage Lockout for Both High-side and Low-Side Outputs

IX2120 (Data Sheet - Rev 2) The IX2120 is a high voltage integrated circuit that can drive high speed MOSFETs and IGBTs that operate at up to +1200V. The IX2120 is configured with independent high-side and low-side referenced output channels, both of which can source and sink 2A. The floating high-side channel can drive an N-channel power MOSFET or IGBT 1200V from the common reference.

Manufactured on IXYS Integrated Circuits Division's proprietary high-voltage BCDMOS on SOI (silicon on insulator) process, the IX2120 is extremely robust, and is virtually immune to negative transients. The UVLO circuit prevents turn-on of the MOSFET or IGBT until there is sufficient VBS or VCC supply voltage.

The IX2120 is available in a 28-pin SOIC package.

IX2120 Application Diagram
IX2127: HV Power MOSFET & IGBT Driver (top)
  • Floating Channel Designed for Bootstrap Operation up to 600V
  • Tolerant to Negative Transient Voltages; dV/dt Immune
  • Undervoltage Lockout
  • 3.3V, 5V, and 12V Input Logic Compatible
  • Open-Drain FAULT Indicator Pin Shows Over-Current Shutdown
  • Output in Phase with the Input

IX2127 (Data Sheet - Rev 4) The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift circuitry enables this device to operate up to 600V. Our proprietary common-mode design techniques provide stable operation in high dV/dt noise environments. An on-board comparator can be used to detect an over-current condition in the driven MOSFET or IGBT device, and then shut down drive to that device. An open-drain output, /FAULT, indicates that an over-current shutdown has occurred.

The gate driver output typically can source 250mA and sink 500mA, which is suitable for fluorescent lamp ballast, motor control, SMPS, and other converter drive topologies.

IX2127 Typical Application
IX21844: High Voltage Half-Bridge Gate Driver (top)
  • Floating Channel for Bootstrap Operation to +600V with an Absolute Maximum Rating of +700V
  • Programmable Dead-Time
  • Outputs Can Source 1.4A and Sink 1.8A
  • Gate Drive Supply Range From 10V to 20V
  • Tolerant to Negative Voltage Transients: dV/dt Immune
  • 3.3V and 5V Logic Compatible
  • Undervoltage Lockout for Both High-side and Low-Side Outputs
  • Matched Propagation Delays

IX21844 (Data Sheet - Rev 1) The IX21844 is a high voltage IC that can drive high speed MOSFETs and IGBTs that operate up to +600V. The IX21844 is configured with dependent high-side and low side referenced output channels which can source 1.4A and sink 1.8A. The floating high-side channel can drive an N-channel power MOSFET or IGBT 600V from the common reference.

Manufactured on IXYS Integrated Circuits Division's proprietary high-voltage BCDMOS on SOI (silicon on isolator) process, the IX21844 is extremely robust and virtually immune to negative transients. The UVLO circuit prevents the turn-on of the MOSFET or IGBT until there is sufficient VBS or VCC supply voltage. A programmable dead-time can be set between 400ns and 5us to insure that both the high-side and low-side power MOSFET or IGBT are not enabled at the same time. Propagation delays are matched for use in high frequency applications.

The IX21844 is available in 14-pin DIP and 14-pin SOIC (narrow body) packages. The 14-pin SOIC (narrow body) package is also available in tape & reel.

IX21844 Typical Connections

IX21844-EVAL Evaluation Board: IXYS Integrated Circuits Division's IX21844 evaluation board contains all the necessary circuitry to demonstrate the features of a high voltage gate driver configured as a half-bridge driver..

IX21844 Evaluation Board User's Guide
Contact one of our Authorized Distributors

Click here for Reliability Reports for these devices

 

 
Sales Partner Login Sales Partner Login Link to IXYS Clare Partner Login - Password Required PARTNER LOGIN: PASSWORD REQUIRED